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1N5818 Schottky Diode 30V 1A/5-pcs

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Description This  series  employs  the  Schottky  Barrier  principle  in  a  large  area metal−to−silicon  power  diode.  State−of−the−art  geometry  features chrome  barrier  metal,  epitaxial  construction  with  oxide  passivation and  metal  overlap  contact.  Ideally  suited  for  use  as  rectifiers  in low−voltage,  high−frequency  inverters,  free  wheeling  diodes,  and polarity protection diodes. Manufacturing Part No: 1N5818 Brief Data: Extremely Low VF. Low Stored Charge, Majority Carrier Conduction. Low Power Loss/High Efficiency. Related Information: Detail Specification Our Local Outlet: Shopee lelong.com.my