Description This series employs the Schottky Barrier principle in a large area metal−to−silicon power diode. State−of−the−art geometry features chrome barrier metal, epitaxial construction with oxide passivation and metal overlap contact. Ideally suited for use as rectifiers in low−voltage, high−frequency inverters, free wheeling diodes, and polarity protection diodes. Manufacturing Part No: 1N5818 Brief Data: Extremely Low VF. Low Stored Charge, Majority Carrier Conduction. Low Power Loss/High Efficiency. Related Information: Detail Specification Our Local Outlet: Shopee lelong.com.my
