Description Enhancement Mode Field Effect Transistors (FET) are produced using Fairchild’s proprietary, high cell density, DMOS technology. This high density process has been designed to minimise on-state resistance, provide rugged and reliable performance and fast switching. Brief Data: Channel Type: N. Maximum Continuous Drain Current ID: 300mA. Maximum Drain Source Voltage: 60V. Maximum Drain Source Resistance: 13.5Ω. Maximum Gate Threshold Voltage: 2.5V. Maximum Gate Source Voltage: ±20V. Package Type: SOT-23. Mounting Type: SMD. Transistor Configuration: Single. Pin Count: 3. Related Information: Detail Specification Our Local Outlet: lelong.com.my
